| Power Consumption (Active) | 3.7W |
|---|---|
| Memory Components | V-NAND MLC |
| Form Factor | M.2 2280 |
| 4KB Random Write | QD1: 53 000 IOPS, QD32: 320 000 IOPS |
| Max Sequential Read | Up to 2900 MB/s |
| Capacity | 250GB |
| Brand | SamSung |
| Used For | Consumer |
| Encryption | AES 256-bit Full Disk Encryption TCG/Opal V2.0 Encrypted Drive (IEEE1667) |
| 4KB Random Read | QD1: 17 000 IOPS, QD32: 230 000 IOPS |
| Model | MZ-V8V250B/AM |
| Series | Samsung 980 |
| Features | – Full Power Mode through Magician 6.3 allows the 980 to run at peak level for nonstop for a consistent high performance, – Host Memory Buffer (HMB) links DRAM in the host directly to the 980 to overcome performance restrain from DRAMless, – Intelligent TurboWrite 2.0 maximize full potential performance with enlarged TurboWrite region up to 5.5 times, – Power consumption is reduced up to 32% and power efficiency is improved up to 56% vs. 970 EVO, – Solid performance with Seq. Read/Write speeds up to 2 900/1 300 MB/s, – Thermal control solution provides 50% less heat vs. the 970 EVO, – Uncompromising endurance with reliability up to 150TBW, OPTIMIZED EFFICIENCY, Proven Reliability, SOLID PERFORMANCE |
| Cache | 0MB |
| Interface | PCIe 3.0 x4 NVMe 1.4 |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 1300 MB/s |
| Height | 2.2mm |
| Controller | Pablo |
SAMSUNG 980 M.2 2280 250GB PCI-Express 3.0 x4, NVMe 1.4 V-NAND MLC Internal Solid State Drive (SSD) MZ-V8V250B/AM
The SAMSUNG 980 M.2 2280 250GB SSD is a high-performance internal storage solution designed for speed and reliability. Utilizing PCIe 3.0 x4 and NVMe 1.4 interface, it delivers fast read/write speeds up to 2,900/1,300 MB/s, significantly enhancing system responsiveness. Built with Samsung’s V-NAND MLC technology, it ensures durability and efficient data handling. Its compact M.2 2280 form factor makes it ideal for desktops and laptops. Key benefits include improved boot times, faster file transfers, and optimized thermal control with Samsung’s Dynamic Thermal Guard. A trusted choice for users seeking a balance of performance, reliability, and value.
| Power Consumption (Active)： | 3.7W |
|---|---|
| Memory Components： | V-NAND MLC |
| Form Factor： | M.2 2280 |
| 4KB Random Write： | QD1: 53 000 IOPS, QD32: 320 000 IOPS |
| Max Sequential Read： | Up to 2900 MB/s |
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