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SAMSUNG 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND Internal Solid State Drive (SSD) MZ-V7S2T0B/AM

The SAMSUNG 970 EVO PLUS 2TB M.2 NVMe SSD delivers exceptional performance with read/write speeds up to 3,500/3,300 MB/s, powered by Samsung’s V-NAND technology and a robust Phoenix controller. Designed for high-end gaming, content creation, and demanding applications, it offers superior reliability with up to 1,200 TBW and advanced thermal control for sustained performance. Its compact M.2 2280 form factor ensures easy installation in desktops and laptops, while NVMe 1.3 support maximizes bandwidth efficiency. Backed by a 5-year limited warranty, it combines speed, endurance, and trusted Samsung quality for next-level computing.

Brand:SamSung
Products Status:New
Model:MZ-V7S2T0B/AM
Used For:Consumer
Application:Desktop

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  • INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 970 EVO Plus SSD’s NVMe interface (PCIe Gen 3.0 x4 NVMe 1.3) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
  • BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,500 MB/s and 3,300 MB/s, respectively; Random Read (4KB, QD32): Up to 620,000 IOPS Random Read
  • PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
  • SUPERIOR HEAT DISSIPATION: Samsung’s Nickel-coated controller and Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops
  • 1200 TBW (Terabytes Written)

General Information :
Brand : SAMSUNG
Product Series : 970 Series
Product Model : MZ-V7S2T0B/AM
Product Type : Solid State Drive
Product Name : 970 Evo Solid State Drive.

Technical Information :
Device Type : Solid State Drive – Internal
Capacity : 2tb
Hardware Encryption : Yes
Encryption Algorithm : 256-bit Aes
Nand Flash Memory Type : Triple-level Cell (tlc)
Form Factor : M.2 2280
Interface : Pcie 3.0 X4 (nvme)
Buffer Size : 2 Gb
Features : Trim Support, Sleep Mode, Auto Garbage Collection Algorithm, V-nand Technology, Nvm Express (nvme) 1.3, SAMSUNG Phoenix Controller, S.m.a.r.t.

Performance :
Ssd Endurance : 1200 Tb
Internal Data Rate : 3500 Mbps (read) / 3300 Mbps (write)
4kb Random Read : 19000 Iops
4kb Random Write : 62000 Iops
4kb Random Write : 560000 Iops
4kb Random Read : 620000 Iops

Reliability :
Mtbf: 1,500,000 Hours

Expansion & Connectivity :
Interfaces : Pci Express 3.0 X4 (nvme) – M.2 Card
Compatible Bay : M.2 2280

Environmental Parameters :
Min Operating Temperature : 32 °f
Max Operating Temperature : 158 °f
Shock Tolerance (operating) : 1500 G @ 0.5 Ms Half-sine

Physical Characteristics :
Width : 0.9 In
Depth : 3.2 In
Height : 0.1 In
Weight : 0.28 Oz

Brand

SamSung

Products Status

New

Model

MZ-V7S2T0B/AM

Used For

Consumer

Application

Desktop

Capacity

2TB

Form Factor

M.2 2280

Memory Components

Samsung V-NAND 3-bit MLC

Max Sequential Read

Up to 3500 MB/s

4KB Random Read

4KB QD1: Up to 19 000 IOPS, 4KB QD32: Up to 620 000 IOPS

4KB Random Write

4KB QD1: Up to 62 000 IOPS, 4KB QD32: Up to 560 000 IOPS

Depth

80.15mm

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Width

22.15mm

Encryption

AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive)

Power Consumption (Active)

Average: 6W, Maximum: 9W (Burst mode)

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